| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing method enabling high polishing speed and low dishing even in condition of low contact pressure between a polished surface of a workpiece (wafer) and a polishing pad and the less number of rotations of a plate in polishing the workpiece. <P>SOLUTION: In the polishing method, polishing is executed by moving a polishing pad while bringing it into contact with the workpiece by rotating the polishing plate while supplying a metal polishing liquid to the polishing pad on the polishing plate. In the polishing method, the metal polishing liquid contains polishing particles made of a complex of an inorganic particle and an organic particle, an organic acid containing class 2 or 3 nitrogen atoms, and a heterocyclic compound; the contact pressure between the polished surface and the polishing pad is 4,000-12,000; and the number of rotations of the polishing plate is 50-100 rpm. <P>COPYRIGHT: (C)2007,JPO&INPIT |
