发明名称 |
ALUMINUM NITRIDE POWDER, ALUMINUM NITRIDE-BASED CERAMIC SINTERED BODY, MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE, ALUMINUM NITRIDE LUMINESCENT MATERIAL, AND METHOD OF MANUFACTURING ALUMINUM NITRIDE POWDER |
摘要 |
<P>PROBLEM TO BE SOLVED: To improve a volume resistivity under a high-temperature atmosphere without adding an alkaline earth elements or boron. <P>SOLUTION: Aluminum nitride powder is prepared, for example, by placing 100 g of aluminum nitride (AlN) powder and 2.0 g of aluminum oxide (Al<SB>2</SB>O<SB>3</SB>) powder in a graphite crucible 1 and graphite crucibles 2a, 2b shown by figure 1 and thereafter, treating the entire crucible 3 shown by figure 1 with heat while keeping under a nitrogen atmosphere at a temperature of 2,200°C and a pressure of 1.5 kgf/cm<SP>2</SP>for 2 hours. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007191383(A) |
申请公布日期 |
2007.08.02 |
申请号 |
JP20060329776 |
申请日期 |
2006.12.06 |
申请人 |
NGK INSULATORS LTD |
发明人 |
YOSHIKAWA JUN;KOBAYASHI YOSHIMASA;TERATANI NAOMI |
分类号 |
C01B21/072;C04B35/581;C04B35/626;H01L21/683 |
主分类号 |
C01B21/072 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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