| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase a signal amount of a memory cell (DRAM memory cell or the like) constituting a semiconductor device (DRAM or the like). <P>SOLUTION: The semiconductor device is provided with a substrate; an element separation layer that is formed inside a groove for element separation which is formed in the substrate, and is formed of an insulating film and a conductive layer; a first conduction-type semiconductor layer for signal charge accumulation which is formed between the element separation layers, and is separated from the conductive layer by the insulating film; a second conduction type semiconductor layer formed below the first conduction type semiconductor layer; and a transistor formed above the first conduction type semiconductor layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
