METHOD FOR FORMING SILICON COMPOUND COATED FILM ON SEMICONDUCTOR PARTICLE SURFACE, PHOTOELECTRIC CONVERSION APPARATUS, AND PHOTOVOLTAIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a forming method of a silicon compound coated film on a semiconductor particle surface capable of highly effectively and stably crystallizing semiconductor particles such as polycrystalline silicon, and of inexpensively manufacturing crystallinity silicon particles having high crystalline properties.

SOLUTION: The forming method of a silicon compound coated film on the surface of semiconductor particles 101 capable of reducing a contact between the semiconductor particles 101 and a base plate 102 by rocking or rotating the base plate 102 on which the semiconductor particles 101 are placed when the silicon compound coated film is formed on the surface of the semiconductor particles 101.

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