Method for forming a dielectric layer with an air gap, and a structure including the dielectric layer with the air gap

摘要

A method of forming a semiconductor structure includes providing a first dielectric layer with an opening above a substrate. An exposed surface portion of the first dielectric layer in the opening is transformed. A protective dielectric layer is formed along the transformed portion of the first dielectric layer. The opening is filled with a conductive material. The transformed portion of the first dielectric layer is removed to form an air gap between the protective dielectric layer and a remaining portion of the first dielectric layer.