| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing method capable of suppressing surface defect including scratches, and sufficiently suppressing a cost in practical usage in a planarizing process of a surface to be polished by the chemical mechanical polishing method. <P>SOLUTION: In the chemical mechanical polishing method, polishing is executed by relatively moving a polishing pad by relatively moving the polishing pad in a state where the polishing pad contacts a surface to be polished, while supplying a polishing liquid containing 7-hydroxy-5-methyl-1, 3, 4-triazaindolizine, coloidal silica as a polishing particle, an organic acid represented by a formula (1), and a corrosion inhibitor to the polishing pad on a polishing plate at a flow rate of 0.035-0.25 ml/(min×cm<SP>2</SP>) per unit area of a semiconductor substrate and per time unit. In the formula, R<SP>1</SP>and R<SP>2</SP>each independently denote hydrogen atom, alkyl group, phenyl group, carboxyl radical, hydroxyl group or organic group substituted by amino group. A reference numeral n denotes 0 or 1. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
