| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To establish low power consumption and high reliability of a spin FET and a spin memory. <P>SOLUTION: The spin FET is provided with a magnetic fixation layer 12 wherein magnetization direction is fixed, magnetic free layer 13 wherein magnetization direction varies, a channel between the magnetic fixation layer 12 and the magnetic free layer 13, a gate electrode 19 arranged on the channel with a gate insulation layer 18 in-between, and a magnetic layer 15 which is arranged on the magnetic free layer 13 and its magnetization direction changes according to an electric field. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
