| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate, a method of manufacturing a semiconductor device, and a semiconductor device in which stable transistor characteristics can be obtained. SOLUTION: A method of manufacturing a semiconductor substrate 41 includes a step of forming support holes 21, 22 on an element separation layer 12, burying a support forming layer 27 in the support holes 21, 22, forming the layer 27 to cover a silicon layer 16, and then completing a support 26. Thus, the portion 18b of the polycrystal epitaxial film 18 is interposed between the support 26 and a monocrystal epitaxial film 17. By etching a first silicon germanium layer 15a thereafter, the portion 18b of the polycrystal epitaxial film 18 is also removed together. As a result, between a lateral side of the first silicon layer 16a and the support 26, a cavity can be prepared which is capable of buffering stress applied to the first silicon layer 16a. COPYRIGHT: (C)2007,JPO&INPIT
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