| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory device using an electric element including a status change material whose resistance value changes according to a given pulse voltage, and a reproduction voltage polarity determination method of its electric element. <P>SOLUTION: A lower electrode 3 is formed on a substrate 4, a state change material 2 is formed on a lower electrode 3, and an upper electrode 1 is formed on the state change material 2. A power supply 5 applies predetermined voltage between the upper electrode 1 and the lower electrode 3. The state change material 2 indicates a property (diode property) where the current is easy to flow in a forward direction but the current is hard to flow in the opposite direction; and a property (variable resistance property) to increase/decrease the resistance value by applying the predetermined pulse voltage. <P>COPYRIGHT: (C)2007,JPO&INPIT |
