| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit, which can achieve high precision measurement of discrete static current consumption properties, even if two or more semiconductor integrated circuits are tested simultaneously on one wafer for their static current consumption. <P>SOLUTION: The semiconductor integrated circuit is provided with at least two or more second conductivity-type first semiconductor region 22, a first conductivity-type second semiconductor region 25 which is insulated from the semiconductor substrate, and formed on the first semiconductor region 22, a semiconductor integrated circuit portion which is formed in the manner of separating and adjoining at least two or more first semiconductor region 22, and comprises semiconductor elements formed in the first semiconductor region 22 and the second semiconductor region 25, at least one high potential and low potential power source terminal formed in the first semiconductor region 22 and the second semiconductor region 25, to give an operating voltage to the semiconductor integrated circuit portion, and a terminal 503 which is formed in any region other than the region formed in the manner of separating and adjoining at least two or more first semiconductor region 22, and applies a bias potential to the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
