| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high performance semiconductor device having a tunnel insulation film. SOLUTION: The method for manufacturing the semiconductor device includes a process to form a first insulation film 12 which has a first dielectric constant and becomes a part of the tunnel insulation film on a semiconductor substrate 11 containing silicon; a process to form a floating gate electrode film 13 formed by a semiconductor film containing silicon on the first insulation film; a process to form a first structure having a first side by patterning the floating gate electrode film, the first insulation film, and the semiconductor substrate; a process to expose the first structure to an atmosphere containing oxidant; and a process to form a second insulation film 16a which has a second dielectric constant lower than the first dielectric constant and becomes a part of the tunnel insulation film, by oxidizing with oxidant the portion corresponding to the border of the first insulation film of the floating gate electrode film and the floating gate electrode film. COPYRIGHT: (C)2007,JPO&INPIT
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