发明名称 |
CMOS SEMICONDUCTOR DEVICES HAVING DUAL WORK FUNCTION METAL GATE STACKS |
摘要 |
CMOS semiconductor devices having dual work function metal gate structures that are formed using fabrication techniques that enable independent work function control for PMOS and NMOS device and which significantly reduce or otherwise eliminate impact on gate dielectric reliability.
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申请公布号 |
US2007178634(A1) |
申请公布日期 |
2007.08.02 |
申请号 |
US20060550602 |
申请日期 |
2006.10.18 |
申请人 |
JUNG HYUNG SUK;LEE JONG HO;HAN SUNG KEE;KIM JU YOUN;PARK JUNG MIN |
发明人 |
JUNG HYUNG SUK;LEE JONG HO;HAN SUNG KEE;KIM JU YOUN;PARK JUNG MIN |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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