| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element for achieving homogeneous image quality in the entire part of an image by controlling discontinuity of image signal generated at the boundary of divided exposure, even when unit pixels are arranged in the shape of an array with the divided exposure. SOLUTION: The solid-state imaging element comprises a photo-electric converting unit for converting an optical signal into signal charge, a transfer transistor for transferring signal charge accumulated in the photo-electric converting unit, a floating and diffusing region for holding signal charge transferred with the transfer transistor and then converting the signal charge into a voltage, an amplification transistor for outputting signal potential in the floating and diffusing region, and a resetting transistor for resetting signal charge. The gate 103a of the transfer transistor and the gate 104a of the reset transistor are located through exposure using the same mask, and the floating and diffusing region is formed through self-alignment to substantially provide constant area adjacent to the gate of transfer transistor and the gate of reset transistor. COPYRIGHT: (C)2007,JPO&INPIT |
