| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device high in reliability and yield, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device has a first gate electrode 14 formed on a semiconductor substrate 10, a first diffusion layer 20 formed in the semiconductor substrate under one side face of the first gate electrode 14, a second diffusion layer 18 formed in the semiconductor substrate under the other side face of the first gate electrode 14, a second gate electrode 13 whose side face is formed on the second diffusion layer 18, a first insulating film 25, which fills between the first/second gate electrodes 14, 13, is formed thinner than a thickness of filling between the first/second gate electrodes 14, 13 on the first diffusion layer 20, and is not mainly made of nitrogen, a second insulating film 26 formed on the first insulating film 25, an interlayer insulating film 27 formed on the second insulating film 26 and having a main component different from that of the second insulating film 26, and a contact electrode 23 connected to the first diffusion layer 20 and formed in the first insulating film 25, second insulating film 26, and interlayer insulating film 27. COPYRIGHT: (C)2007,JPO&INPIT
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