| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin film transistor having high mobility and low threshold voltage. SOLUTION: The organic thin film transistor comprises a gate electrode 102 formed on a substrate 101, a gate insulating film 103 formed on the gate electrode 102, an organic semiconductor layer 105 formed on the gate insulating film 103, and a source electrode 106 and drain electrode 107 formed on the organic semiconductor layer 105 or on the gate insulating film 103 with the organic semiconductor layer 105 in-between. The surface of the gate insulating film 103 is chemically coupled for modification with a second organic molecule having the same main skeleton as that of the first organic molecule constituting the organic semiconductor layer 105. COPYRIGHT: (C)2007,JPO&INPIT
|
