发明名称 |
Cleaning solution for silicon surface and methods of fabricating semiconductor device using the same |
摘要 |
A cleaning solution and methods of fabricating semiconductor devices using the same are provided. A cleaning solution used for cleaning a silicon surface and methods of fabricating a semiconductor device using the same are also provided. The cleaning solution may include 0.01 to 1 wt % of fluoric acid, 20 to 50 wt % of oxidizer and 50 to 80 wt % of water. The cleaning solution may further include 1 to 20 wt % of acetic acid. The cleaning solution may be used Lo clean a silicon surface exposed during fabrication processes of a semiconductor device. The cleaning solution may reduce damage of other material layers (e.g., a tungsten layer or a silicon oxide layer) and enable the silicon surface to be selectively etched.
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申请公布号 |
US2007178706(A1) |
申请公布日期 |
2007.08.02 |
申请号 |
US20070656470 |
申请日期 |
2007.01.23 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
KIM SANG-YONG;HONG CHANG-KI;SHIM WOO-GWAN |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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