发明名称 |
METHODS FOR FABRICATING DRAM SEMICONDUCTOR DEVICES INCLUDING SILICON EPITAXIAL AND METAL SILICIDE LAYERS |
摘要 |
Provided are a DRAM semiconductor device and a method for fabricating the DRAM semiconductor device. The method provides forming a silicon epitaxial layer on a source/drain region of a cell region and a peripheral circuit region using selective epitaxial growth (SEG), thereby forming a raised active region. In addition, in the DRAM semiconductor device, a metal silicide layer and a metal pad are formed on the silicon epitaxial layer in the source/drain region of the cell region. By doing this, the DRAM device is capable of forming a source/drain region as a shallow junction region, reducing the occurrence of leakage current and lowering the contact resistance with the source/drain region.
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申请公布号 |
US2007178642(A1) |
申请公布日期 |
2007.08.02 |
申请号 |
US20070688554 |
申请日期 |
2007.03.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM CHUL-SUNG;LEE BYEONG-CHAN;YOO JONG-RYEOL;CHOI SI-YOUNG;LEE DEOK-HYUNG |
分类号 |
H01L21/8242;H01L21/20;H01L21/331;H01L21/336;H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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