| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a flat crystal growth film is formed on a substrate in which pits and projections are selectively formed. <P>SOLUTION: The semiconductor device comprises a substrate 10 and a semiconductor layer formed on the substrate 10. The substrate 10 has a flat area 20 provided on a main surface; a first uneven area 21 provided in a portion different from the flat area 20, and formed with a first recess 11; and a second uneven area 22 which is provided between the first uneven area 21 and the flat area 20, and is formed with a second recess 12 in which a generation probability of a growing core, when a semiconductor is crystal-grown on the main surface, is lower than the first uneven area 21 and higher than the flat area 20. <P>COPYRIGHT: (C)2007,JPO&INPIT |
