| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal production management system and method for growing a single crystal having a desired specific resistance by exactly estimating the amount of impurities contained in an ingot to be regenerated and used. SOLUTION: The single crystal production management system is provided to manage the amount of impurities when one part of a single crystal not sliced into wafers is used as an ingot to be reused to grow the other single crystal. The system has: a specific resistance profile recording section for recording the specific resistance profile of the other part of the single crystal from which the ingot to be reused is obtained; a simulation section for searching a profile formula showing the specific resistance profile in the ingot to be reused from an impurity concentration estimation formula comprising variables including at least one selected from the specific resistance at both ends in the growth axis direction of the crystal of the ingot to be reused and the impurity concentration, the segregation coefficient, the solidification rate and the correction coefficient when pulling is started, and the specific resistance profile; and an impurity amount calculation section for calculating the amount of impurities in the ingot to be reused based on the specific resistance profile formula. COPYRIGHT: (C)2007,JPO&INPIT
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