| 摘要 |
PROBLEM TO BE SOLVED: To easily obtain an FET using a carbon nanotube having desired semiconductor characteristics. SOLUTION: Metallic carbon nanotubes 103a, 103b, 103c and a semiconductor carbon nanotube 104 are mixedly provided between metallic electrodes 102 arranged on a substrate 101. The metallic carbon nanotubes 103a, 103b, 103c to be put in a semiconductor state and the carbon nanotube 104 to be changed in its semiconductor characteristic are selectively illuminated with photons (light). For example, the carbon nanotube 104 is a target to be changed to its more remarkable semiconductor characteristic. In the light illumination, a mask is used so that the carbon nanotube 103c not as a change target is not illuminated with photons. With use of such a mask, only a desired region can be illuminated with photons. COPYRIGHT: (C)2007,JPO&INPIT
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