发明名称 |
TEST PATTERN WAFER FOR DEFECT INSPECTING DEVICE, ITS MANUFACTURING METHOD, AND EVALUATION METHOD OF DEFECT INSPECTION APPARATUS USING IT |
摘要 |
PROBLEM TO BE SOLVED: To make proper inspection conditions of an electron-beam semiconductor wafer inspection apparatus. SOLUTION: Inspection conditions of an inspection apparatus are made proper by creating a sample where a nonconductive contact hole 2 on a wafer through defect position and size thereof, and the thickness of a defect layer are clear, and by evaluating the sample. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007194422(A) |
申请公布日期 |
2007.08.02 |
申请号 |
JP20060011429 |
申请日期 |
2006.01.19 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
SUZUKI SHINICHI;NAKANO YASUKI;KONNO TAKEHIKO |
分类号 |
H01L21/66;G01N23/225 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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