发明名称 TEST PATTERN WAFER FOR DEFECT INSPECTING DEVICE, ITS MANUFACTURING METHOD, AND EVALUATION METHOD OF DEFECT INSPECTION APPARATUS USING IT
摘要 PROBLEM TO BE SOLVED: To make proper inspection conditions of an electron-beam semiconductor wafer inspection apparatus. SOLUTION: Inspection conditions of an inspection apparatus are made proper by creating a sample where a nonconductive contact hole 2 on a wafer through defect position and size thereof, and the thickness of a defect layer are clear, and by evaluating the sample. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007194422(A) 申请公布日期 2007.08.02
申请号 JP20060011429 申请日期 2006.01.19
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 SUZUKI SHINICHI;NAKANO YASUKI;KONNO TAKEHIKO
分类号 H01L21/66;G01N23/225 主分类号 H01L21/66
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