| 摘要 |
PROBLEM TO BE SOLVED: To increase the number of devices taken out of an SOI substrate by preventing occurrence of voids at the periphery of a laminate substrate. SOLUTION: The advancing speed of laminating is set within a specified range to prevent occurrence of voids. In the case (for example) of laminating of silicon wafers of 725μm in thickness together, the speed is set to be 0.1-50 mm/second. The advancing speed of lamination is controlled by viscosity, kind, and pressure of atmosphere. COPYRIGHT: (C)2007,JPO&INPIT
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