发明名称 Thin film transistor array panel and method of manufacturing the same
摘要 A thin film transistor (TFT) array panel and method of manufacturing the same are provided. The method includes forming a semiconductor layer and an ohmic contact layer over a gate line, forming a conductive layer on the ohmic contact layer, forming a first photosensitive layer pattern on the conductive layer, etching the conductive layer using the first photosensitive layer pattern as an etching mask, etching the ohmic contact layer and the semiconductor layer by a fluorine-containing gas, a chloride-containing gas, and an oxygen (O<SUB>2</SUB>) gas using the first photosensitive layer pattern as an etching mask, removing the first photosensitive layer pattern to a predetermined thickness to form a second photosensitive layer pattern, and etching the conductive layer using the second photosensitive layer pattern as an etching mask to expose a part of the ohmic contact layer.
申请公布号 US2007178413(A1) 申请公布日期 2007.08.02
申请号 US20060544987 申请日期 2006.10.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI SEUNG-HA;OH MIN-SEOK;CHIN HONG-KEE;KIM SANG-GAB;JEONG YU-GWANG
分类号 G03F7/26 主分类号 G03F7/26
代理机构 代理人
主权项
地址