LIGHT EMITTING DEVICE AND THE FABRICATION METHOD THEREOF

摘要

A light emitting device and its manufacturing method are provided to generates from an UV ray to an infrared ray and to improve the brightness by applying characteristics of ZnO to the light emitting device using a stacked structure composed of an Mg doped p-GaN semiconductor layer, a ZnO based active layer and an N type ZnO semiconductor layer. An N type semiconductor layer made of AlxInyGa1-x-y(0 x,y,x+y 1) compound semiconductor material is formed on a substrate(110). A P type semiconductor layer made of AlxInyGa1-x-y(0 x,y,x+y 1) compound semiconductor material is formed on the N type semiconductor layer. A ZnO based active layer(160) is formed on the P type semiconductor layer. An N type ZnO layer(170) is formed on the ZnO based active layer. A zener diode and a light emitting diode are formed on the resultant structure by patterning selective the resultant structure.