发明名称 METHOD FOR MANUFACTURING THIN FILM CAPACITOR
摘要 PROBLEM TO BE SOLVED: To prevent a water immersion to an electrode layer in order to prevent a cause of insulation failure and a performance deterioration of a dielectric film, which provides a thin film capacitor having a stable performance for a long period of time. SOLUTION: A method for manufacturing the thin film capacitor comprises the steps of forming metal layers (13, 14) to be a lower electrode on a support substrate (11), and a dielectric film (15) on the metal layers; forming a first opening (24) which covers the dielectric film with a protective film (40) and exposes a part of a metal film by piercing the protective film and the dielectric film, and a second opening (23) which pierces the protective film and exposes a part of the dielectric film; and respectively filling a conductive material to the first opening and the second opening, and respectively forming a lower electrode (27) connected to the metal layer and an upper electrode (26) conjugated to the upper surface of the dielectric film. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007194472(A) 申请公布日期 2007.08.02
申请号 JP20060012449 申请日期 2006.01.20
申请人 SHINKO ELECTRIC IND CO LTD 发明人 SHIMIZU NORIYOSHI;YAMAZAKI TOMOO;MUTSUKAWA AKIO
分类号 H01L21/822;H01G4/33;H01L27/04 主分类号 H01L21/822
代理机构 代理人
主权项
地址