发明名称 Semiconductor-based image sensor
摘要 A detector arrangement and/or a semiconductor-based image sensor with a plurality of detector elements or image pixels is described, which each have an integrated SD-(Sigma Delta) Modulator ( 20 to 29 ) or an integrated SD-A/D-(Sigma Delta Analog/Digital) converter ( 20 to 30 ), as well as particularly such a detector arrangement and/or such an image sensor on the basis of a CMOS-semiconductor. Particularly on the basis of the differential version and/or the multi-phase structure of the SD modulator and the SD-A/D converter, a detector arrangement and/or an image sensor with specially high noise robustness, a high dynamic range and a lesser noise can be produced, so that this is particularly suitable for usage in Computer Tomography (CT) apparatus.
申请公布号 US2007176108(A1) 申请公布日期 2007.08.02
申请号 US20050597017 申请日期 2005.01.07
申请人 KONINKLIJKE PHILIPS ELECTRONICS NV 发明人 SUCH OLAF;LAUTER JOSEF;GNADE MICHAEL;WEILER DIRK;KEMNA ARMIN;VOGTMEIER GEREON;STEADMAN ROGER
分类号 G01T1/24;H01L27/146;H04N3/15;H04N5/32 主分类号 G01T1/24
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