NONVOLATILE SEMICONDUCTOR MEMORY AND NONVOLATILE MEMORY SYSTEM USING THEREOF

摘要

A nonvolatile semiconductor memory that have a a plurality of bit lines and word lines disposed crossing each other; a memory cell array having a plurality of electrically-programmable memory cells disposed in a region where the bit lines and the word lines are crossing; a trimming circuit which is operated a parameter of initial program voltage every the word line; an initial programming voltage parameter memory section which is stored receiving the parameter of initial program voltage from the trimming circuit; and a controller which is data program for the memory cell array based on the parameter of initial program voltage stored in the initial programming voltage parameter memory section.