A silicon electro-optic waveguide modulator is formed using a metal-oxide-semiconductor (MOS) configuration. Various embodiments are described using different modes of operation of the MOS diode and gate oxide thicknesses. In one example, a high-speed submicron waveguide active device is formed using silicon-on-insulator. A micro-ring resonator intensity-modulator exhibits switching times on the order of tens of pS with modulation depth of 73% with a bias voltage of 5 volts.
申请公布号
WO2007086888(A2)
申请公布日期
2007.08.02
申请号
WO2006US07647
申请日期
2006.03.03
申请人
CORNELL RESEARCH FOUNDATION, INC.;LIPSON, MICHAL;SCHMIDT, BRADLEY;PRADHAN, SAMEER;XU, QIANFAN