| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To form a shallow nickel mono-silicide layer on a shallow junction region. SOLUTION: A metal nickel film is deposited on a silicon surface defined by an insulation film. Thermal treatment is executed at a temperature not exceeding 220°C in a silane atmosphere to form a silicide layer having a composition of Ni<SB>2</SB>Si on an interface with a junction region and the surface of the metal nickel film so that an unreacting metal nickel film may remain. The unreacting metal film is removed by etching. Then, thermal treatment is executed to convert the nickel silicide layer into a nickel mono-silicide layer. COPYRIGHT: (C)2007,JPO&INPIT
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| 申请公布号 |
JP2007194277(A) |
申请公布日期 |
2007.08.02 |
| 申请号 |
JP20060008945 |
申请日期 |
2006.01.17 |
| 申请人 |
FUJITSU LTD |
发明人 |
UCHINO YASUNORI;KAWAMURA KAZUO;TAMURA NAOYOSHI |
| 分类号 |
H01L29/78;H01L21/28;H01L21/336;H01L21/8238;H01L27/092;H01L29/417;H01L29/786 |
主分类号 |
H01L29/78 |
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