发明名称 METAL CAPACITOR INCLUDING LOWER METAL ELECTRODE HAVING HEMISPHERICAL METAL GRAINS
摘要 Disclosed is a metal capacitor including a lower electrode having hemispherical metal grains thereon. The metal capacitor includes a lower metal electrode containing Ti, hemispherical metal grains containing Pd and formed on the lower metal electrode containing Ti, a dielectric layer formed on the lower metal electrode containing Ti and the hemispherical metal grains containing Pd, and an upper metal electrode formed on the dielectric layer.
申请公布号 US2007178654(A1) 申请公布日期 2007.08.02
申请号 US20060609857 申请日期 2006.12.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG SEOK-WOO;LEE CHANG-HUHN;KIM JAE-HUN
分类号 H01L21/336 主分类号 H01L21/336
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