发明名称 |
METAL CAPACITOR INCLUDING LOWER METAL ELECTRODE HAVING HEMISPHERICAL METAL GRAINS |
摘要 |
Disclosed is a metal capacitor including a lower electrode having hemispherical metal grains thereon. The metal capacitor includes a lower metal electrode containing Ti, hemispherical metal grains containing Pd and formed on the lower metal electrode containing Ti, a dielectric layer formed on the lower metal electrode containing Ti and the hemispherical metal grains containing Pd, and an upper metal electrode formed on the dielectric layer.
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申请公布号 |
US2007178654(A1) |
申请公布日期 |
2007.08.02 |
申请号 |
US20060609857 |
申请日期 |
2006.12.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HONG SEOK-WOO;LEE CHANG-HUHN;KIM JAE-HUN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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