发明名称 |
Wide range radiation detector and manufacturing method |
摘要 |
There is disclosed a radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different to the first energy provided on the IV semiconductor layer.
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申请公布号 |
US2007176200(A1) |
申请公布日期 |
2007.08.02 |
申请号 |
US20060454522 |
申请日期 |
2006.06.16 |
申请人 |
HATANAKA YOSHINORI;AOKI TORU |
发明人 |
HATANAKA YOSHINORI;AOKI TORU |
分类号 |
H01L31/00;H01L27/146;H01L29/732;H01L31/0328;H01L31/115 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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