METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor element which suppresses deterioration in light-emitting efficiency due to deposition of In in an InGaN active layer.

SOLUTION: The method of manufacturing a nitride semiconductor element includes a step of forming an n-type semiconductor layer on a substrate; a step of forming an active layer containing InGaN on the n-type semiconductor layer at a first growth temperature; a step of decreasing the temperature lower than the first growing temperature after forming the active layer; and a step of increasing the temperature to a second growing temperature higher than the first growing temperature and forming a p-type GaN layer on the active layer.

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