| 摘要 |
PROBLEM TO BE SOLVED: To perform depositing to a wafer beforehand without adding an excessive process, taking into account the deviance from the ideal planarization condition after a planarization process such as chemical mechanical polishing etc of the wafer. SOLUTION: The chemical mechanical polishing is performed at step S120 using a dummy wafer. At step S130, the amount of polishing is measured by each measuring point within the dummy wafer plane, and the polishing characteristics is grasped by finding the deviance from the ideal planarization condition. At step S140, responding to the deviation from the ideal planarization condition, so as to attain the planarization after actual polish, for example, an ideal dimensional standard is assumed such as depositing thickly beforehand the part where the film thickness becomes thin. At step S150, in conformity to the assumed ideal dimensional standard, the optimization of the constraint factor in depositing is attained, at step S160 depositing is carried out on an actual product wafer, after that at step S170, the chemical mechanical polishing is carried out. COPYRIGHT: (C)2007,JPO&INPIT
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