| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging element along with its manufacturing method, in which insulation property is assured, occurrence of white flaw in dark is suppressed, and smear is improved. SOLUTION: A solid state imaging element 10 comprises a photoelectric converter 30, a charge transfer 40 equipped with a charge transfer electrode 13, a reflection preventing film 14 which comprises an opening 14a above the charge transfer 40 to cover the photoelectric converter 30, and light shielding films 16 and 26 which comprise an opening 16a above the photoelectric converter 30 to cover the charge transfer 40. The thickness of an insulating film 27 formed between the charge transfer electrode 13 and the light shielding film 16 is 5-20 nm on at least the photoelectric converter 30. Otherwise, the light shielding film 26 is formed from a tungsten film formed by a sputtering method. COPYRIGHT: (C)2007,JPO&INPIT
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