发明名称 |
HIGH CONCENTRATION IMPURITY DIAMOND THIN FILM, AND ITS PRODUCTION PROCESS |
摘要 |
PROBLEM TO BE SOLVED: To provide a high concentration impurity diamond thin film employing an impurity concentration inclination layer, and to provide its production process. SOLUTION: An inclination layer where the impurity concentration becomes higher sequentially from the diamond single crystal substrate side is formed by providing a plurality of layers of impurity diamond thin film having different impurity concentrations on the diamond single crystal substrate wherein the outermost layer of diamond thin film contains impurities with highest concentration. Its production process is also provided. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007194231(A) |
申请公布日期 |
2007.08.02 |
申请号 |
JP20060008118 |
申请日期 |
2006.01.17 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
RI SEIKI;YAMAZAKI SATOSHI;OGUSHI HIDEYO;SHIKADA SHINICHI |
分类号 |
H01L21/205;C23C16/27;H01L29/16 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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