发明名称 HIGH CONCENTRATION IMPURITY DIAMOND THIN FILM, AND ITS PRODUCTION PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a high concentration impurity diamond thin film employing an impurity concentration inclination layer, and to provide its production process. SOLUTION: An inclination layer where the impurity concentration becomes higher sequentially from the diamond single crystal substrate side is formed by providing a plurality of layers of impurity diamond thin film having different impurity concentrations on the diamond single crystal substrate wherein the outermost layer of diamond thin film contains impurities with highest concentration. Its production process is also provided. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007194231(A) 申请公布日期 2007.08.02
申请号 JP20060008118 申请日期 2006.01.17
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 RI SEIKI;YAMAZAKI SATOSHI;OGUSHI HIDEYO;SHIKADA SHINICHI
分类号 H01L21/205;C23C16/27;H01L29/16 主分类号 H01L21/205
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