发明名称 |
Copper electrodeposition in microelectronics |
摘要 |
An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is greater than Cu deposition on the side walls.
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申请公布号 |
US2007178697(A1) |
申请公布日期 |
2007.08.02 |
申请号 |
US20060346459 |
申请日期 |
2006.02.02 |
申请人 |
ENTHONE INC. |
发明人 |
PANECCASIO VINCENT JR.;LIN XUAN;FIGURA PAUL;HURTUBISE RICHARD;WITT CHRISTIAN |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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