| 摘要 |
An object of the invention is to manage variation of electrical characteristics of an element in a semiconductor device due to a vapor deposition process by measuring electrical characteristics of a TEG. A substrate 100 of an active matrix EL panel includes a vapor deposition region 101 having a film formed by a vapor deposition method. In the vapor deposition region 101 , a pixel region 102 is provided. A TEG 109 is provided in the vapor deposition region 101 having a film formed in a vapor deposition step and outside of the pixel region 102 . A measurement terminal portion 110 for measuring the TEG 109 is provided outside of a sealing region 103.
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