| 摘要 |
A method of forming integrated circuit components is provided. A photomask is provided that includes a first mask feature having a mask feature geometry corresponding to a first type of integrated circuit (IC) component. A first lithography process is performed to transfer the first mask feature geometry to a semiconductor wafer to form a first IC component on the semiconductor wafer. At least one electrical characteristic of the first IC component on the semiconductor wafer is measured. The first mask feature geometry is physically modified based at least on the results of measuring the at least one electrical characteristic of the first IC component.
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