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发明名称
半导体装置之制造方法
摘要
本发明有关一种半导体装置之制造方法,包含将形成有铝膜之半导体基板供给于使铝膜露出之加工,并进行除去残留在露出之铝膜表面上之加工残留物之表面处理。表面处理包含用含有阴离子成分之第1药液处理露出之铭膜,然后用硷性之第2药液进行处理。
申请公布号
TW200729346
申请公布日期
2007.08.01
申请号
TW095139021
申请日期
2006.10.23
申请人
东芝股份有限公司
发明人
鱼住宜弘;平山孝司;钉田明
分类号
H01L21/321(2006.01);H01L21/3213(2006.01)
主分类号
H01L21/321(2006.01)
代理机构
代理人
陈长文
主权项
地址
日本
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