发明名称 |
SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER |
摘要 |
A SiC wafer comprises a 4H polytype SiC substrate 2 in which the crystal plane orientation is substantially ä03-38ü, and a buffer layer 4 composed of SiC formed over this SiC substrate 2. The ä03-38ü plane forms an angle of approximately 35 DEG with respect to the <0001> axial direction in which micropipes and so forth extend, so micropipes and so forth are eliminated at the crystal sides, and do not go through to an active layer 6 on the buffer layer 4. Lattice mismatching between the SiC substrate 2 and the active layer 6 is suppressed by the buffer layer 4. Furthermore, anisotropy in the electron mobility is low because a 4H polytype is used. Therefore, it is possible to obtain a SiC wafer and a SiC semiconductor device with which there is little anisotropy in the electron mobility, and strain caused by lattice mismatching can be lessened, as well as a method for manufacturing these. <IMAGE> |
申请公布号 |
EP1215730(B9) |
申请公布日期 |
2007.08.01 |
申请号 |
EP20000956966 |
申请日期 |
2000.09.06 |
申请人 |
SIXON INC.;KANSAI ELECTRIC POWER C.C., INC.;MITSUBISHI CORPORATION;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SHIOMI, HIROMU;KIMOTO, TSUNENOBU;MATSUNAMI, HIROYUKI |
分类号 |
H01L29/16;C30B23/00;C30B23/02;C30B25/00;C30B25/02;C30B25/20;C30B29/36;H01L21/04;H01L29/04;H01L29/24;H01L29/47;H01L29/78 |
主分类号 |
H01L29/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|