主权项 |
1.一种氮化物半导体发光元件,其特征在于,设有:n型氮化镓类半导体层;包含InX1AlY1Ga1-X1-Y1N势阱层(1>X1>0,1>Y1>0)和InX2AlY2Ga1-X2-Y2N势垒层(1>X2>0,1>Y2>0)的量子阱发光层;设置在所述量子阱发光层与所述n型氮化镓类半导体层之间的InX3AlY3Ga1-X3-Y3N层(1>X3>0,1>Y3>0);以及具有比所述InX2AlY2Ga1-X2-Y2N势垒层的材料的禁制带宽大的禁制带宽的p型AlGaN半导体层,其中,所述量子阱发光层设置在所述p型AlGaN半导体层与所述InX3AlY3Ga1-X3-Y3N层之间,所述InX3AlY3Ga1-X3-Y3N层的铟组分X3大于所述InX1AlY1Ga1-X1-Y1N势阱层的铟组分X1,所述InX3AlY3Ga1-X3-Y3N层的铟组分X3大于所述InX2AlY2Ga1-X2-Y2N势垒层的铟组分X2,所述InX1AlY1Ga1-X1-Y1N势阱层的铝组分Y1小于所述InX3AlY3Ga1-X3-Y3N层的铝组分Y3,所述InX2AlY2Ga1-X2-Y2N势垒层的铝组分Y2小于所述InX3AlY3Ga1-X3-Y3N层的铝组分Y3,所述量子阱发光层的氧浓度低于所述InX3AlY3Ga1-X3-Y3N层的氧浓度。 |