发明名称 |
CVD process |
摘要 |
<p>A new clean CVD growing process of dopant doped silicon layers comprising epitaxial silicon or polycrystalline silicon, has been developed. The process is occurring advantageously at a high growing temperature of 600-1250° C., having a phase in which silicon comprised halide is used as a silicon source gas with a dopant.</p> |
申请公布号 |
EP1812618(A2) |
申请公布日期 |
2007.08.01 |
申请号 |
EP20050799498 |
申请日期 |
2005.10.05 |
申请人 |
OKMETIC OYJ |
发明人 |
AIRAKSINEN, VELI, MATTI;HOKKANEN, MARIA, ELINA |
分类号 |
C30B25/02;C23C16/24;C30B29/06;H01L21/02 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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