| 摘要 |
A plasma etching apparatus and a plasma etching method are provided to enhance a surface roughness of a wafer, to prevent the generation of failure in an etching process, to improve the efficiency of the etching process, and to control variously the angle of a wafer profile. A plasma etching apparatus includes a chamber(210) for performing an etching process on a wafer(200), a gas flow unit, an upper electrode unit, and a lower electrode unit. The gas flow unit(220) is used for flowing a mixed gas of SF6 and O2 into the chamber. At this time, the flow rate of O2 is 0.8 to 1.4 times larger than that of the SF6. The upper electrode unit(230) is applied with an RF power for changing gas into plasma. The lower electrode unit(250) is applied with a bias voltage for inducing the plasma toward the wafer.
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