| 摘要 |
A semiconductor laser diode and its manufacturing method are provided to minimize optical loss and leakage current and to simplify manufacturing processes by preventing the damage of a ridge due to dry etching using an improved ridge structure formed on a P-wave guide layer through a window by a lateral epitaxial overgrowth. An N-contact layer(110), an N-clad layer(120), an N-wave guide layer(130), an active layer(140), an electron blocking layer(150) and a P-wave guide layer(160) are sequentially formed on a substrate(100). A ridge structure(250) is formed on the P-wave guide layer. The ridge structure is made of a P-clad layer(180). The ridge structure is composed of a lower portion with a width and an upper portion with a larger width than that of the lower portion. The upper portion of the ridge structure is formed like a trapezoid type structure. A protection layer(170) is formed on the P-wave guide layer to enclose the lower portion of the ridge structure. A P-contact layer(190) is formed on the upper portion of the ridge structure. A P-pad electrode(200) encloses the upper region of the ridge structure, the P-contact layer and the protection layer on the resultant structure. An N-pad electrode(210) is formed under the substrate. The ridge structure is formed by using a lateral epitaxial overgrowth. |
