发明名称 Sealed structure and method of fabricating the sealed structure
摘要 <p>According to a sealed structure 60 constituted by anodically bonding a silicon board 20 and a glass plate 40, an upper opening of a recessed portion 22 is sealed in an airtight state by the glass plate 40 by bonding an upper face of a wall portion 26 to the glass plate 40. A voltage applying pattern 70 is formed to surround a light transmitting region to which an optical conversion element 24 is opposed. Further, the voltage applying pattern 70 functions as a cathode pattern applied with a voltage by being brought into contact with a lower face of the cathode plate 50.</p>
申请公布号 EP1813571(A2) 申请公布日期 2007.08.01
申请号 EP20070001893 申请日期 2007.01.29
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 SHIRAISHI, AKINORI;KOIZUMI, NAOYUKI;MURAYAMA, KEI;SAKAGUCHI, HIDEAKI;SUNOHARA, MASAHIRO;TAGUCHI, YUICHI;HIGASHI, MITSUTOSHI
分类号 B81B7/00 主分类号 B81B7/00
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