| 摘要 |
<p>A process for purifying technical grade trichlorosilane and/or technical grade silicon tetrachloride into electronic grade trichlorosilane and/or electronic grade silicon tetrachloride, the process comprising:
adding diphenylthiocarbazone and/or triphenylchloromethane to the technical grade trichlorosilane and/or technical grade silicon tetrachloride to form complex impurity macromolecules with impurities in the technical grade trichlorosilane and/or technical grade silicon tetrachloride , the impurities being selected from the group consisting of boron impurities, boron trichloride, metallic impurities, and combinations thereof;
distilling the technical grade trichlorosilane and/or technical glade silicon tetrachloride having complex impurity macromolecules in a first column distillation, wherein the first column distillation results in first distillation tops and first distillation bottoms, wherein the first distillation bottom comprise complex impurity macromolecules and are removed from the first distillation tops; and
distilling the first distillation tops in a second column distillation resulting in second distillation tops and second distillation bottoms, wherein the second distillation bottoms comprise a residual amount of trichlorosilane and/or silicon tetrachloride and a compound selected from the group consisting of phosphorus chloride, other phosphorus containing compounds, arsenic chloride, other arsenic containing compounds, aluminum compounds, antimony compounds, other metal compounds, metalloid compounds, carbosilane compounds, and combinations thereof, and the second distillation tops comprise electronic grade trichlorosilane and/or electronic grade silicon tetrachloride.</p> |
