| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process for fabricating a light emitting element having a structure formed by pasting an emission layer part and an element substrate through a metal layer in which metallurgic reaction between the element substrate and the metal layer can be prevented effectively during heat treatment for pasting and pasting strength and reflectivity are prevented from lowering through the metallurgic reaction. <P>SOLUTION: On the major surface of the element substrate 7 being bonded with a compound semiconductor layer 24, a diffusion blocking layer 10d composed of an inorganic conductive material and blocking diffusion of components deriving from the element substrate 7 into a main metal layer is formed. Main metal layers 10a and 10b are formed on at least any one of the major surface of the compound semiconductor layer 24 and the major surface of the diffusion blocking layer 10d. The element substrate 7 and the compound semiconductor layer 24 are then laid in layer through the diffusion blocking layer 10d and the main metal layers 10a and 10b. Under that state, they are pasted through heat treatment thus pasting the element substrate 7 and the compound semiconductor layer 24 through the diffusion blocking layer 10d and the main metal layer 10. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
