发明名称 |
METHOD FOR MANUFACTURING ANNEALED WAFER AND ANNEALED WAFER |
摘要 |
Provided is a manufacturing process for an annealed wafer capable of elucidating a relationship between a tilt angle from a (100) plane of a wafer to be annealed and haze to set optimal tilt angles for suppression of haze and to improve a characteristic of a device from the annealed wafer as a result of the suppression of haze. A silicon mirror wafer having a surface orientation with a tilt angle in the range of 0.1 degree < &thetas; < 0.2 degree from a (100) plane or a plane equivalent thereto is heat treated in an atmosphere of hydrogen gas, an inert gas, nitrogen gas or a mixed gas thereof. <IMAGE> |
申请公布号 |
EP1276141(A4) |
申请公布日期 |
2007.08.01 |
申请号 |
EP20010980948 |
申请日期 |
2001.11.01 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD |
发明人 |
AKIYAMA, SHOJI |
分类号 |
C30B33/00;H01L21/02;H01L21/26;H01L21/322;H01L21/324;H01L29/04 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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