Method for forming the isolation layer of semiconductor device,申请号KR20050102219-传众专利搜索

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发明名称	Method for forming the isolation layer of semiconductor device
摘要
申请公布号	KR100744806(B1)	申请公布日期	2007.08.01
申请号	KR20050102219	申请日期	2005.10.28
申请人		发明人
分类号	H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
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