发明名称 |
A CMOS image pick-up sensor with high shutter rejection ratio |
摘要 |
<p>A pixel image sensor has an isolation barrier and diffusion well connected to a biasing voltage to prevent substrate charge leakage caused by photoelectrons generated in the substrate beneath a photon sensing area of the pixel image sensor from drifting to a storage node. An opaque metallic silicide layer is deposited on and a metal shield is fabricated above the storage node and storage node control transistor switches to prevent light from impinging on the storage node and storage node control transistor switches and thus preventing generation of photoelectrons at the storage node and storage node control transistor switches. A guard ring surrounds the photo sensing area, the storage node, and the storage node control transistor switches and is in contact with the biasing voltage and reduces cross-talk from photoelectrons drifting from adjacent image sensors.
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申请公布号 |
EP1727205(A3) |
申请公布日期 |
2007.08.01 |
申请号 |
EP20060392008 |
申请日期 |
2006.05.18 |
申请人 |
DIALOG SEMICONDUCTOR GMBH |
发明人 |
GUANG, YANG;TANER, DOSLUOGLU |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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